The Sept 2014 issue of the IEEE Journal of the Electron Devices Society is now available and is open access. The article in this months issue include
- Graphene for Electron Devices: The Panorama of a Decade
- On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors
- Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
- All-Graphene Planar Double Barrier Resonant Tunneling Diodes
- First Demonstration of Ultra-Thin SiGe-Channel Junctionless
- Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme
- Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors
- Solid-State Image Sensors