Loading...
 

NanoBlog

Intel 10 nm FinFET process

morreale Saturday 10 of September, 2016
The Semiconductor Engineering website posted an interview with Mark Bohr senior fellow and director of process architecture and integration at Intel, and Zane Ball, vice president in the Technology and Manufacturing Group at Intel and co-general manager of Intel Custom Foundry. In the article, we learned that
  • 10 nm will be a full node for Intel
  • 10 nm devices will be full production around 2H 2017
  • Some design rules are scaling is better than 0.56x
  • Uses 193nm immersion and self-aligned double patterning