Tag Archives: IV Curve

Graphene FET Toy Physics Model

This graphene FET toy physics model is primarily based on the graphene physics described in the paper┬áElectronic transport in two dimensional graphene by S. D. Sarma et. al. and from materials properties data found in a number of sources (see the Description tab for the details). I’d appreciate any comments on errors, problems, inaccuracies, or how to make this model better.

The IV Model tab allows you to selected the gate dielectric, dielectric thickness, mobility, gate voltage, phonon energy of the dielectric, drain-source voltage, drain-source length and width, and the resulting IV curve is plotted for these parameters.

The Performance Table tab shows a summary of the graphene FET performance based on the selected values on the IV Model tab.

The Materials Properties Tab shows the dielectric constant, breakdown voltage, and optical phonon energy for each gate dielectric that can be selected in the IV Model tab.